Jaehong Park, Kiwon Lee, Jooseok Lee, Kyounghoon Yang
{"title":"集成了HBT开关的低功耗通断模式rtd振荡器","authors":"Jaehong Park, Kiwon Lee, Jooseok Lee, Kyounghoon Yang","doi":"10.1109/ICIPRM.2014.6880552","DOIUrl":null,"url":null,"abstract":"A low power on-off mode resonant tunneling diode (RTD) based oscillator is demonstrated by using an RTD/heterojunction bipolar transistor (HBT) MMIC technology. Using the negative differential resistance (NDR) characteristics of the tunneling diode, which arise at a low applied voltage range from the quantum-effect, the low power oscillators are used for microwave on-off keying (OOK) signal modulation. The fabricated RTD-based oscillator shows low power consumption of 5 mW at an oscillation frequency of 5.2 GHz. The RTD-based oscillator operates in an on-off mode with a high data rate of 1 Gb/s from the fast switching capabilities of the RTD and HBT switch. A good energy efficiency of 5 pJ/bit has been obtained in this work.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low power on-off mode RTD-based oscillator integrated with an HBT switch\",\"authors\":\"Jaehong Park, Kiwon Lee, Jooseok Lee, Kyounghoon Yang\",\"doi\":\"10.1109/ICIPRM.2014.6880552\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low power on-off mode resonant tunneling diode (RTD) based oscillator is demonstrated by using an RTD/heterojunction bipolar transistor (HBT) MMIC technology. Using the negative differential resistance (NDR) characteristics of the tunneling diode, which arise at a low applied voltage range from the quantum-effect, the low power oscillators are used for microwave on-off keying (OOK) signal modulation. The fabricated RTD-based oscillator shows low power consumption of 5 mW at an oscillation frequency of 5.2 GHz. The RTD-based oscillator operates in an on-off mode with a high data rate of 1 Gb/s from the fast switching capabilities of the RTD and HBT switch. A good energy efficiency of 5 pJ/bit has been obtained in this work.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880552\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880552","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power on-off mode RTD-based oscillator integrated with an HBT switch
A low power on-off mode resonant tunneling diode (RTD) based oscillator is demonstrated by using an RTD/heterojunction bipolar transistor (HBT) MMIC technology. Using the negative differential resistance (NDR) characteristics of the tunneling diode, which arise at a low applied voltage range from the quantum-effect, the low power oscillators are used for microwave on-off keying (OOK) signal modulation. The fabricated RTD-based oscillator shows low power consumption of 5 mW at an oscillation frequency of 5.2 GHz. The RTD-based oscillator operates in an on-off mode with a high data rate of 1 Gb/s from the fast switching capabilities of the RTD and HBT switch. A good energy efficiency of 5 pJ/bit has been obtained in this work.
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