直流和脉冲反相电化学沉积Cu膜的薄膜性能和表面形貌

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854319

C. Hsieh, S.W. Chou, S. Shue, C. Yu, M. Liang

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引用次数: 0

摘要

研究了电化学沉积(ECD)制备的Cu薄膜在直流和脉冲反相过程中的自退火性能和表面反射率。它们在这两种过程中表现出不同的行为，并且它们的行为与薄膜的晶粒尺寸有很好的相关性。根据两种工艺填缝后的表面轮廓，讨论了填缝机理。提出直流工艺的间隙填充主要受添加剂扩散控制，而脉冲反相工艺的间隙填充主要受添加剂吸附控制。

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Film properties and surface profile after gap fill of electrochemically deposited Cu films by DC and pulse reverse processes

The self-annealing and the surface reflectivity of Cu films prepared by electrochemical deposition (ECD) are obtained for the DC and pulse reverse processes. They show different behaviors for these two processes, and their behaviors can be well correlated with the grain size of the films. The mechanism of gap fill is discussed according to the surface profile after gap fill for these two processes. It is proposed that the gap filling is mainly controlled by the additive diffusion for the DC process, while it is mainly controlled by the additive adsorption for the pulse reverse process.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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