HfO2电阻式随机存取存储器中导电氧空位的性质及IV特性的紧凑建模

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241604

Junsung Park, Minjae Kim, Jae‐Hyung Jang, Sung-Min Hong

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摘要

研究了基于hfo2的电阻式随机存取存储器(RRAM)。第一部分提取了氧空位的两个参数。计算了氧空位(或扩展的Frenkel对)的迁移势垒。还计算了灯丝的电阻率。第二部分对现有的RRAM压缩模型进行了实现，并与实验数据进行了比较

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Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories

The HfO2-based resistive random-access-memory (RRAM) is studied. In the first part, two parameters of oxygen vacancies are extracted. The migration barrier of the oxygen vacancy (or the extended Frenkel pair) is calculated. The resistivity of a filament is also calculated. In the second part, an existing compact model for the RRAM is implemented and its results are compared with the experimental data

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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