{"title":"低电压和低功耗SOI逆变电路的比较研究","authors":"W. Jin, C. Chan","doi":"10.1109/SOI.1997.634958","DOIUrl":null,"url":null,"abstract":"Substantial progress has been made in SOI technology for low-voltage and low-power applications in recent years. Novel SOI devices, with the capabilities of low power and high performance, have been proposed, modeled and fabricated. A comparison of these devices at circuit level is highly required. However, previous works are either incomplete or at device level. In this paper, a comparative study of inverter circuits composed of four types of SOI devices is conducted based on MEDICI simulation.","PeriodicalId":344728,"journal":{"name":"1997 IEEE International SOI Conference Proceedings","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A comparative study of SOI inverter circuits for low-voltage and low-power applications\",\"authors\":\"W. Jin, C. Chan\",\"doi\":\"10.1109/SOI.1997.634958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Substantial progress has been made in SOI technology for low-voltage and low-power applications in recent years. Novel SOI devices, with the capabilities of low power and high performance, have been proposed, modeled and fabricated. A comparison of these devices at circuit level is highly required. However, previous works are either incomplete or at device level. In this paper, a comparative study of inverter circuits composed of four types of SOI devices is conducted based on MEDICI simulation.\",\"PeriodicalId\":344728,\"journal\":{\"name\":\"1997 IEEE International SOI Conference Proceedings\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1997.634958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1997.634958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparative study of SOI inverter circuits for low-voltage and low-power applications
Substantial progress has been made in SOI technology for low-voltage and low-power applications in recent years. Novel SOI devices, with the capabilities of low power and high performance, have been proposed, modeled and fabricated. A comparison of these devices at circuit level is highly required. However, previous works are either incomplete or at device level. In this paper, a comparative study of inverter circuits composed of four types of SOI devices is conducted based on MEDICI simulation.