低电压和低功耗SOI逆变电路的比较研究

W. Jin, C. Chan
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引用次数: 1

摘要

近年来,SOI技术在低压低功耗应用方面取得了实质性进展。具有低功耗和高性能的新型SOI器件已经被提出、建模和制造。在电路级对这些器件进行比较是非常必要的。然而,以前的工作要么是不完整的,要么是在设备层面。本文在MEDICI仿真的基础上,对四种SOI器件组成的逆变电路进行了对比研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A comparative study of SOI inverter circuits for low-voltage and low-power applications
Substantial progress has been made in SOI technology for low-voltage and low-power applications in recent years. Novel SOI devices, with the capabilities of low power and high performance, have been proposed, modeled and fabricated. A comparison of these devices at circuit level is highly required. However, previous works are either incomplete or at device level. In this paper, a comparative study of inverter circuits composed of four types of SOI devices is conducted based on MEDICI simulation.
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