沟槽绝缘栅双极晶体管载流子动力学的统一解析模型

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515033

F. Udrea, G. Amaratunga

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引用次数: 34

摘要

提出了沟槽绝缘栅双极晶体管(TIGBT)的导态载流子动力学的物理分析模型。该模型考虑了由于PIN二极管效应导致的漂移基中的载波调制增强。采用数值模拟和解析建模的方法准确地描述了TIGBT中的导通现象。PIN二极管效应在降低导通状态正向电压而几乎不影响关断性能方面起着非常重要的作用。结果表明，在高压或/和快速开关器件领域，TIGBT是最有前途的电源结构。

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A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)

A physically-based analytical model for the on-state carrier dynamics in Trench Insulated Gate Bipolar Transistors (TIGBT) is proposed. The model accounts for the enhanced carrier modulation in the drift base due to the PIN diode effect. The on-state phenomena in the TIGBT are accurately described using numerical simulations and analytical modeling. The PIN diode effect has a very important role in reducing the on-state forward voltage with virtually no compromise in the turn-off performance. It is concluded that the TIGBT is the most promising power structure in the area of high voltage or/and fast switching devices.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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