{"title":"NGL概览》","authors":"B. Lin","doi":"10.1109/vtsa.2009.5159306","DOIUrl":null,"url":null,"abstract":"ArF water-immersion lithography supports 1.35 NA or slightly higher but cannot reach the theoretical limit of 1.44 NA. It is increasing difficult to resolve half pitches below k1=(HP/λ)*NA=0.28, i.e. 40-nm half pitch.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"NGL Overview\",\"authors\":\"B. Lin\",\"doi\":\"10.1109/vtsa.2009.5159306\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ArF water-immersion lithography supports 1.35 NA or slightly higher but cannot reach the theoretical limit of 1.44 NA. It is increasing difficult to resolve half pitches below k1=(HP/λ)*NA=0.28, i.e. 40-nm half pitch.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vtsa.2009.5159306\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vtsa.2009.5159306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
ArF water-immersion lithography supports 1.35 NA or slightly higher but cannot reach the theoretical limit of 1.44 NA. It is increasing difficult to resolve half pitches below k1=(HP/λ)*NA=0.28, i.e. 40-nm half pitch.
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