{"title":"基于0.5 /spl mu/m Au/Pd/Ti栅极mesfet的GaAs MMIC工艺可靠性","authors":"A. Bensoussan, P. Coval, W. Roesch, T. Rubalcava","doi":"10.1109/RELPHY.1994.307802","DOIUrl":null,"url":null,"abstract":"In a cooperative Supplier/Customer program, qualification testing was completed on GaAs Technology Characterization Vehicles (TCVs), Standard Evaluation Circuits (SECs) and MMICs for application in space. Degradation was measured in multiple 4,000 hour tests at 200/spl deg/C and 225/spl deg/C. Comparisons between circuits, TCVs, and historical database were favourable and a new diffusion model for MESFET wearout was developed.<<ETX>>","PeriodicalId":276224,"journal":{"name":"Proceedings of 1994 IEEE International Reliability Physics Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Reliability of a GaAs MMIC process based on 0.5 /spl mu/m Au/Pd/Ti gate MESFETs\",\"authors\":\"A. Bensoussan, P. Coval, W. Roesch, T. Rubalcava\",\"doi\":\"10.1109/RELPHY.1994.307802\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In a cooperative Supplier/Customer program, qualification testing was completed on GaAs Technology Characterization Vehicles (TCVs), Standard Evaluation Circuits (SECs) and MMICs for application in space. Degradation was measured in multiple 4,000 hour tests at 200/spl deg/C and 225/spl deg/C. Comparisons between circuits, TCVs, and historical database were favourable and a new diffusion model for MESFET wearout was developed.<<ETX>>\",\"PeriodicalId\":276224,\"journal\":{\"name\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1994.307802\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1994.307802","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability of a GaAs MMIC process based on 0.5 /spl mu/m Au/Pd/Ti gate MESFETs
In a cooperative Supplier/Customer program, qualification testing was completed on GaAs Technology Characterization Vehicles (TCVs), Standard Evaluation Circuits (SECs) and MMICs for application in space. Degradation was measured in multiple 4,000 hour tests at 200/spl deg/C and 225/spl deg/C. Comparisons between circuits, TCVs, and historical database were favourable and a new diffusion model for MESFET wearout was developed.<>
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