C-AFM分析技术在高级集成电路上对ATPG/Scan故障的应用

C. H. Chong, W. Hoe, R. Lin, Hong Bo Zhang
{"title":"C-AFM分析技术在高级集成电路上对ATPG/Scan故障的应用","authors":"C. H. Chong, W. Hoe, R. Lin, Hong Bo Zhang","doi":"10.1109/ipfa.2011.5992735","DOIUrl":null,"url":null,"abstract":"The application of the Conductive Atomic Force Microscope (C-AFM) has been widely used in the semiconductor industry for failure analysis on nanometer scale technology. Its main application in SRAM analysis for high/low resistance and junction leakages differentiation had proven to be very useful in determining the failure mechanism. We had successfully utilized a methodology using C-AFM to help us detect soft defect failure such as LDD missing/shallowing without using nanoprobing. This paper will demonstrate a new approach of the C-AFM to identify the electric characteristic of ATPG/Scan failure in CMOS process. Current FA methodology for ATPG/Scan failure utilizes layout and top view SEM image comparison to determine any abnormality between the physical chip and the intended masking. The beam tracer module, which is an added function from nanoprobe system, had demonstrated its feasibility in helping to improve the success rate of ATPG/Scan failure analysis (Figure 1). However the cost of setting up the nanoprobe system and purchasing the beam tracer module can be substantially high. Other methodologies include utilizing TIVA/OBRICH/EMMI techniques to deduce fault localization within the tracing path, but the success rate is layout design and failure mechanism dependant.","PeriodicalId":312315,"journal":{"name":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Applications of C-AFM analysis techniques at advanced IC on ATPG/Scan failure\",\"authors\":\"C. H. Chong, W. Hoe, R. Lin, Hong Bo Zhang\",\"doi\":\"10.1109/ipfa.2011.5992735\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The application of the Conductive Atomic Force Microscope (C-AFM) has been widely used in the semiconductor industry for failure analysis on nanometer scale technology. Its main application in SRAM analysis for high/low resistance and junction leakages differentiation had proven to be very useful in determining the failure mechanism. We had successfully utilized a methodology using C-AFM to help us detect soft defect failure such as LDD missing/shallowing without using nanoprobing. This paper will demonstrate a new approach of the C-AFM to identify the electric characteristic of ATPG/Scan failure in CMOS process. Current FA methodology for ATPG/Scan failure utilizes layout and top view SEM image comparison to determine any abnormality between the physical chip and the intended masking. The beam tracer module, which is an added function from nanoprobe system, had demonstrated its feasibility in helping to improve the success rate of ATPG/Scan failure analysis (Figure 1). However the cost of setting up the nanoprobe system and purchasing the beam tracer module can be substantially high. Other methodologies include utilizing TIVA/OBRICH/EMMI techniques to deduce fault localization within the tracing path, but the success rate is layout design and failure mechanism dependant.\",\"PeriodicalId\":312315,\"journal\":{\"name\":\"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ipfa.2011.5992735\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ipfa.2011.5992735","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

导电原子力显微镜(C-AFM)已广泛应用于半导体工业的纳米级失效分析。它主要应用于SRAM分析,用于高/低电阻和结漏的区分,已被证明对确定失效机制非常有用。我们已经成功地利用C-AFM方法来帮助我们检测软缺陷故障,如LDD缺失/变浅,而不使用纳米探针。本文将展示一种新的C-AFM方法来识别CMOS工艺中ATPG/Scan失效的电特性。当前用于ATPG/Scan故障的FA方法利用布局和俯视图SEM图像比较来确定物理芯片与预期屏蔽之间的任何异常。束示踪模块是纳米探针系统的一个附加功能,已经证明了其在帮助提高ATPG/Scan故障分析成功率方面的可行性(图1)。然而,设置纳米探针系统和购买束示踪模块的成本可能相当高。其他方法包括利用TIVA/OBRICH/EMMI技术在跟踪路径中推断故障定位,但成功率取决于布局设计和故障机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Applications of C-AFM analysis techniques at advanced IC on ATPG/Scan failure
The application of the Conductive Atomic Force Microscope (C-AFM) has been widely used in the semiconductor industry for failure analysis on nanometer scale technology. Its main application in SRAM analysis for high/low resistance and junction leakages differentiation had proven to be very useful in determining the failure mechanism. We had successfully utilized a methodology using C-AFM to help us detect soft defect failure such as LDD missing/shallowing without using nanoprobing. This paper will demonstrate a new approach of the C-AFM to identify the electric characteristic of ATPG/Scan failure in CMOS process. Current FA methodology for ATPG/Scan failure utilizes layout and top view SEM image comparison to determine any abnormality between the physical chip and the intended masking. The beam tracer module, which is an added function from nanoprobe system, had demonstrated its feasibility in helping to improve the success rate of ATPG/Scan failure analysis (Figure 1). However the cost of setting up the nanoprobe system and purchasing the beam tracer module can be substantially high. Other methodologies include utilizing TIVA/OBRICH/EMMI techniques to deduce fault localization within the tracing path, but the success rate is layout design and failure mechanism dependant.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信