气团离子束辐照用于晶圆键合

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947401

N. Toyoda, Tomoya Sasaki, S. Ikeda, I. Yamada

{"title":"气团离子束辐照用于晶圆键合","authors":"N. Toyoda, Tomoya Sasaki, S. Ikeda, I. Yamada","doi":"10.23919/LTB-3D.2017.7947401","DOIUrl":null,"url":null,"abstract":"Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gas cluster ion beam irradiation for wafer bonding\",\"authors\":\"N. Toyoda, Tomoya Sasaki, S. Ikeda, I. Yamada\",\"doi\":\"10.23919/LTB-3D.2017.7947401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.\",\"PeriodicalId\":183993,\"journal\":{\"name\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/LTB-3D.2017.7947401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

进行了气团离子束辐照键合硅片的初步实验。GCIB独特的辐照效应，如低损伤辐照和表面光滑效应，将有利于表面活化键合。从XPS, AFM测量中，斜入射Ar-GCIB辐射有效地去除Cu膜上的天然氧化物，而不会使其变粗。随着Ar-GCIB加速电压的增加，Cu-Cu键增加。由于表面平滑和Ar-GCIB去除氧化物而导致的接触角减小与结合强度之间存在相关性。

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Gas cluster ion beam irradiation for wafer bonding

Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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