键合界面对高压双极晶体管直流特性的影响

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515049

A. Laporte, M. Bagneres, D. Strutzenberger, J. Reynes, G. Sarrabayrouse

{"title":"键合界面对高压双极晶体管直流特性的影响","authors":"A. Laporte, M. Bagneres, D. Strutzenberger, J. Reynes, G. Sarrabayrouse","doi":"10.1109/ISPSD.1995.515049","DOIUrl":null,"url":null,"abstract":"The bonded interface situated in an active layer of a high voltage bipolar transistor (base or collector) leads to a deterioration of the DC characteristics. The electron lifetime modification or the interfacial potential barrier due to the interfacial defects or impurities could be at the origin of these degradations.","PeriodicalId":200109,"journal":{"name":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Influence of a bonded interface on the DC characteristics of a high voltage bipolar transistor\",\"authors\":\"A. Laporte, M. Bagneres, D. Strutzenberger, J. Reynes, G. Sarrabayrouse\",\"doi\":\"10.1109/ISPSD.1995.515049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The bonded interface situated in an active layer of a high voltage bipolar transistor (base or collector) leads to a deterioration of the DC characteristics. The electron lifetime modification or the interfacial potential barrier due to the interfacial defects or impurities could be at the origin of these degradations.\",\"PeriodicalId\":200109,\"journal\":{\"name\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1995.515049\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1995.515049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

位于高压双极晶体管(基极或集电极)有源层中的键合界面导致直流特性的恶化。由于界面缺陷或杂质导致的电子寿命改变或界面势垒可能是这些降解的根源。

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Influence of a bonded interface on the DC characteristics of a high voltage bipolar transistor

The bonded interface situated in an active layer of a high voltage bipolar transistor (base or collector) leads to a deterioration of the DC characteristics. The electron lifetime modification or the interfacial potential barrier due to the interfacial defects or impurities could be at the origin of these degradations.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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