FET器件高频去嵌入及建模研究

2009 73rd ARFTG Microwave Measurement Conference Pub Date : 2009-06-12 DOI:10.1109/ARFTG.2009.5278076

I. Angelov, K. Kanaya, S. Goto, M. Abbasi

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引用次数: 6

摘要

在毫米波频率下，由于测量的不确定性较大，去嵌入技术开始失效。本文分析和测量了各种衬垫-晶体管跃迁。评估了测量与基于仿真的嵌入布局表征的使用情况。应用建议的测量，建模提取程序，结果高达220 GHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the High Frequency de-embedding& modeling of FET devices

At millimetre wave frequencies, de-embedding techniques start to fail due to larger uncertainty in measurements. In this paper, various pads-transistor transitions are being analysed and measured. The usage of measurement versus simulation based characterisation of the embedding layout is evaluated. Applying suggested measuring, modelling extraction procedure, results up to 220 GHz are demonstrated.

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2009 73rd ARFTG Microwave Measurement Conference

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