利用多阻抗法对晶体管特性进行毫米波噪声参数自动提取的原位硅集成调谐器

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI:10.1109/ICMTS.2009.4814637

Y. Tagro, D. Gloria, S. Boret, Y. Morandini, G. Dambrine

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引用次数: 7

摘要

本文首次提出了利用多阻抗法提取硅晶体管(HBT, MOSFET)毫米波噪声参数(NFmin, Rn，¿opt)的硅集成调谐器。该调谐器直接集成在晶圆测试晶体管测试结构中。本文描述了调谐器的设计、电气仿真和毫米波测量，显示了从60GHz到110GHz的CMOS和BiCMOS sub 65nm技术表征能力。在考虑的频率范围内，在DUT输入处达到0.88，调谐器插入损耗小于20 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-Situ Silicon Integrated Tuner for Automated On-Wafer MMW Noise Parameters Extraction using Multi-Impedance Method for Transistor Characterization

In this paper, for the first time, Silicon integrated tuner is presented aiming silicon transistor (HBT, MOSFET) MilliMeter Wave (MMW) noise parameters (NFmin, Rn, ¿opt) extraction through multi-impedance method. This Tuner is directly integrated in On-wafer tested transistor test structure. Design, electrical simulation and MMW measurement of the Tuner are described showing capability from 60GHz up to 110GHz for CMOS and BiCMOS sub 65nm technologies characterization. ¿ of 0.88 have been achieved at the DUT input in the considered frequency range and Tuner insertion losses are less than 20 dB.

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来源期刊

2009 IEEE International Conference on Microelectronic Test Structures

CiteScore

0.80

自引率

0.00%

发文量