增强的门控二极管电流(EGCDC)测量

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292895

C. Viswanathan, Jen-tai Hsu, P. Aum, D. Chan

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引用次数: 0

摘要

介绍了一种测量短沟道MOS晶体管门控二极管电流(GCDC)的方法。该技术利用MOS晶体管的内部双极作用来放大GCDC，从而延长了测量的灵敏度。给出了在小型几何装置和大型装置上的测量结果。提出了一种基于寄生双极晶体管作用的增强门控二极管电流模型。

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Enhanced gate-controlled-diode current (EGCDC) measurement

A technique for the measurement of the gate-controlled-diode-current (GCDC) in short-channel MOS transistors is described. This technique uses the internal bipolar action of the MOS transistor to amplify the GCDC, thereby extending the sensitivity of the measurement. Results of measurements on small geometry devices, as well as on larger devices, are given. A model based on parasitic bipolar transistor action is given for the enhanced gate-controlled diode current (EGCDC).<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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