{"title":"使用新型低温生长增强结晶技术的最简单堆叠BST电容器","authors":"Takehiro, Yamauchi, Yoshimaru, Onoda","doi":"10.1109/VLSIT.1997.623744","DOIUrl":null,"url":null,"abstract":"The simplest stacked capacitor with BST thinner films (about 50nm-thick) grown by a novel low temperature growth [ 11 was demonstrated. The storage node without sidewall spacer was constructed by thinner Ru-layer, sputtered-TiN diffusion barrier, TiSix electrical contact layer and poly-Si plug. The low temperature BST growth prevented the leakage current increase of BST films as thin as 25nm. Therefore, 50% step coverage BST-capacitor was performed as sidewall-less simple stacked capacitors with large storage charge.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"The Simplest Stacked BST Capacitor For The Future DRAMs Using A Novel Low Temperature Growth Enhanced Crystallization\",\"authors\":\"Takehiro, Yamauchi, Yoshimaru, Onoda\",\"doi\":\"10.1109/VLSIT.1997.623744\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The simplest stacked capacitor with BST thinner films (about 50nm-thick) grown by a novel low temperature growth [ 11 was demonstrated. The storage node without sidewall spacer was constructed by thinner Ru-layer, sputtered-TiN diffusion barrier, TiSix electrical contact layer and poly-Si plug. The low temperature BST growth prevented the leakage current increase of BST films as thin as 25nm. Therefore, 50% step coverage BST-capacitor was performed as sidewall-less simple stacked capacitors with large storage charge.\",\"PeriodicalId\":414778,\"journal\":{\"name\":\"1997 Symposium on VLSI Technology\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1997.623744\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Simplest Stacked BST Capacitor For The Future DRAMs Using A Novel Low Temperature Growth Enhanced Crystallization
The simplest stacked capacitor with BST thinner films (about 50nm-thick) grown by a novel low temperature growth [ 11 was demonstrated. The storage node without sidewall spacer was constructed by thinner Ru-layer, sputtered-TiN diffusion barrier, TiSix electrical contact layer and poly-Si plug. The low temperature BST growth prevented the leakage current increase of BST films as thin as 25nm. Therefore, 50% step coverage BST-capacitor was performed as sidewall-less simple stacked capacitors with large storage charge.
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