{"title":"多层互连的原位CMP监测技术","authors":"A. Fukuroda, K. Nakamura, Y. Arimoto","doi":"10.1109/IEDM.1995.499240","DOIUrl":null,"url":null,"abstract":"An all-around in situ monitor for CMP was developed. It can detect the even surface during planarization, polishing pad wear, lack of uniformity on the surface of a wafer, and the interface of different materials. In this method, small vibrations of the polishing head were detected by using an accelerometer, and signal processing techniques were used to determine polishing events.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"In situ CMP monitoring technique for multi-layer interconnection\",\"authors\":\"A. Fukuroda, K. Nakamura, Y. Arimoto\",\"doi\":\"10.1109/IEDM.1995.499240\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An all-around in situ monitor for CMP was developed. It can detect the even surface during planarization, polishing pad wear, lack of uniformity on the surface of a wafer, and the interface of different materials. In this method, small vibrations of the polishing head were detected by using an accelerometer, and signal processing techniques were used to determine polishing events.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499240\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499240","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In situ CMP monitoring technique for multi-layer interconnection
An all-around in situ monitor for CMP was developed. It can detect the even surface during planarization, polishing pad wear, lack of uniformity on the surface of a wafer, and the interface of different materials. In this method, small vibrations of the polishing head were detected by using an accelerometer, and signal processing techniques were used to determine polishing events.
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