4.5 kv - 2000a Power Pack IGBT(超高功率扁平封装PT型RC-IGBT)

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856767

T. Fujii, K. Yoshikawa, T. Koga, A. Nishiura, Y. Takahashi, H. Kakiki, M. Ichijyou, Y. Seki

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引用次数: 12

摘要

采用PT(穿孔式)型IGBT芯片，采用方形陶瓷封装内的均匀芯片并联，采用先进的多集电极结构，研制出4.5 kv - 2000a型电源包IGBT (Flat-Packaged Reverse Conducting IGBT)。成功实现了4500 A的高关断能力(@V/sub CC/=2600 V, T/sub j/=125/spl度/C)和超过15 /spl μ s的短路能力(@V/sub CC/=3000 V, T/sub j/=125/spl度/C)。

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4.5 kV-2000 A Power Pack IGBT (ultra high power flat-packaged PT type RC-IGBT)

A 4.5 kV-2000 A Power Pack IGBT (Flat-Packaged Reverse Conducting IGBT) has been developed by use of the PT (Punch-Through) type IGBT chip, the uniform chip parallel connection in the square ceramic package and the advanced multi-collector structure. The high turn off capability of 4500 A (@V/sub CC/=2600 V, T/sub j/=125/spl deg/C) and the short circuit capability of over 15 /spl mu/s (@V/sub CC/=3000 V, T/sub j/=125/spl deg/C) are successfully achieved.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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