基于W\Al2O3\Ti\ cute的1T1R CBRAM系统的场驱动超快子ns编程

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242465

L. Goux, K. Sankaran, G. Kar, N. Jossart, K. Opsomer, R. Degraeve, G. Pourtois, G. Rignanese, C. Detavernier, S. Clima, Y. Chen, A. Fantini, B. Govoreanu, D. Wouters, M. Jurczak, L. Altimime, J. Kittl

{"title":"基于W\\Al2O3\\Ti\\ cute的1T1R CBRAM系统的场驱动超快子ns编程","authors":"L. Goux, K. Sankaran, G. Kar, N. Jossart, K. Opsomer, R. Degraeve, G. Pourtois, G. Rignanese, C. Detavernier, S. Clima, Y. Chen, A. Fantini, B. Govoreanu, D. Wouters, M. Jurczak, L. Altimime, J. Kittl","doi":"10.1109/VLSIT.2012.6242465","DOIUrl":null,"url":null,"abstract":"We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3 electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu+ species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"38 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"45","resultStr":"{\"title\":\"Field-driven ultrafast sub-ns programming in W\\\\Al2O3\\\\Ti\\\\CuTe-based 1T1R CBRAM system\",\"authors\":\"L. Goux, K. Sankaran, G. Kar, N. Jossart, K. Opsomer, R. Degraeve, G. Pourtois, G. Rignanese, C. Detavernier, S. Clima, Y. Chen, A. Fantini, B. Govoreanu, D. Wouters, M. Jurczak, L. Altimime, J. Kittl\",\"doi\":\"10.1109/VLSIT.2012.6242465\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3 electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu+ species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.\",\"PeriodicalId\":266298,\"journal\":{\"name\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"volume\":\"38 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"45\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2012.6242465\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 45

摘要

我们通过设计合适密度和厚度的Al2O3电解质和Ti缓冲层，优化了90nm宽的cute基1T1R CBRAM电池，以实现高控制和超快编程。通过电学和从头算模型，我们证明了开关主要是由Cu+的场驱动运动控制的。在较短的绝缘间隙上，通过强离子跳跃势垒的减少，可以实现Sub-ns编程。在整个操作范围内显示电导和开关现象的完整图像。

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Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system

We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3 electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu+ species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.

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2012 Symposium on VLSI Technology (VLSIT)

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