在自洽蒙特卡罗器件仿真中引入重组生成过程的一种新的实用方法

Gyo-Young Jin, E. Kan, R. Dutton
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引用次数: 1

摘要

提出了一种将重组生成(R-G)过程整合到自洽蒙特卡罗(MC)器件仿真中的实用方法。为了计算R-G速率,我们使用了类似于众所周知的SRH机制的现象学表达式,而不是在微观相互作用水平上处理载体。MC模拟中最丰富、最准确的信息载体浓度可以更直接地用于提高R-G效应的统计稳定性和准确性。用实际的器件实例,正偏n/sup +/ p二极管的少数载流子注入和800 /spl的Aring/薄膜SOI MOSFET的冲击电离体效应,证明了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation
A new practical method to incorporate recombination-generation (R-G) processes into self consistent Monte Carlo (MC) device simulation is considered. To calculate the R-G rate, a phenomenological expression like that for the well-known SRH mechanism is used instead of treating carriers in the microscopic interaction level. The most abundant and accurate information in MC simulation, carrier concentrations, can be utilized more directly to enhance the statistical stability and accuracy for the R-G effects. Realistic device examples, the minority carrier injection of a forward-biased n/sup +/-p diode and the body effect from impact ionization of a 800 /spl Aring/ thin-film SOI MOSFET, are used to demonstrate the validity of this approach.
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