低/spl kappa/聚合物DVS-BCB的铜漂移模型

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854328

T. Hoernig, K. Melzer, U. Schubert, H. Geisler, J.W. Barthar

{"title":"低/spl kappa/聚合物DVS-BCB的铜漂移模型","authors":"T. Hoernig, K. Melzer, U. Schubert, H. Geisler, J.W. Barthar","doi":"10.1109/IITC.2000.854328","DOIUrl":null,"url":null,"abstract":"To prove the reliability of DVS-BCB (Benzocyclobutene) as an interlevel-dielectric in copper-metallization-systems we investigated the extreme low copper drift rate in this spin-on-polymer. BTS-Sequences (B_ias-T_emperature S_tress) were applied to accelerate the copper drift in the polymer. Using experimentally obtained data, an equation was created to compute the copper drift rate in the DVS-BCB as a function of the applied voltage and the temperature of the polymer. The copper drift rate in the DVS-BCB, Metal-Insulator-Substrat-structures (MIS) were determined by Capacitance-Voltage-measurements (CV). The results obtained by this method are supported by a Secondary ion Mass Spectroscopy-analysis (SIMS). A linear relationship between the logarithmic copper drift rate as a function of the applied voltage and the temperature of the polymer was determined. The experimental data used to establish the equation of the drift rate covers temperatures and electrical conditions used in integrated circuits under operation.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A copper drift-model for the low-/spl kappa/ polymer DVS-BCB\",\"authors\":\"T. Hoernig, K. Melzer, U. Schubert, H. Geisler, J.W. Barthar\",\"doi\":\"10.1109/IITC.2000.854328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To prove the reliability of DVS-BCB (Benzocyclobutene) as an interlevel-dielectric in copper-metallization-systems we investigated the extreme low copper drift rate in this spin-on-polymer. BTS-Sequences (B_ias-T_emperature S_tress) were applied to accelerate the copper drift in the polymer. Using experimentally obtained data, an equation was created to compute the copper drift rate in the DVS-BCB as a function of the applied voltage and the temperature of the polymer. The copper drift rate in the DVS-BCB, Metal-Insulator-Substrat-structures (MIS) were determined by Capacitance-Voltage-measurements (CV). The results obtained by this method are supported by a Secondary ion Mass Spectroscopy-analysis (SIMS). A linear relationship between the logarithmic copper drift rate as a function of the applied voltage and the temperature of the polymer was determined. The experimental data used to establish the equation of the drift rate covers temperatures and electrical conditions used in integrated circuits under operation.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854328\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

为了证明DVS-BCB (Benzocyclobutene)作为铜金属化体系的层间介质的可靠性，我们研究了这种自旋聚合物中极低的铜漂移率。采用bts序列(b_ias - t_temperature - S_tress)加速铜在聚合物中的漂移。利用实验得到的数据，建立了铜在DVS-BCB中的漂移速率随外加电压和聚合物温度变化的方程。采用电容电压测量(CV)法测定了DVS-BCB、金属-绝缘子-衬底结构(MIS)中的铜漂移率。所得结果得到了二次离子质谱分析(SIMS)的支持。测定了铜的对数漂移率与外加电压和聚合物温度之间的线性关系。用于建立漂移率方程的实验数据涵盖了集成电路运行时的温度和电气条件。

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A copper drift-model for the low-/spl kappa/ polymer DVS-BCB

To prove the reliability of DVS-BCB (Benzocyclobutene) as an interlevel-dielectric in copper-metallization-systems we investigated the extreme low copper drift rate in this spin-on-polymer. BTS-Sequences (B_ias-T_emperature S_tress) were applied to accelerate the copper drift in the polymer. Using experimentally obtained data, an equation was created to compute the copper drift rate in the DVS-BCB as a function of the applied voltage and the temperature of the polymer. The copper drift rate in the DVS-BCB, Metal-Insulator-Substrat-structures (MIS) were determined by Capacitance-Voltage-measurements (CV). The results obtained by this method are supported by a Secondary ion Mass Spectroscopy-analysis (SIMS). A linear relationship between the logarithmic copper drift rate as a function of the applied voltage and the temperature of the polymer was determined. The experimental data used to establish the equation of the drift rate covers temperatures and electrical conditions used in integrated circuits under operation.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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