采用低压工艺设计了具有三维轮廓结构的高压DDDMOSFET和LDMOSFET

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694463

Chien-Hao Huang, Tsung-Yi Huang, C. Yang, H. Chu, K. Lo, C. Hung, Kuo-Cheng Chang, H. Su, Chih-Fang Huang, J. Gong

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引用次数: 1

摘要

在这项工作中，利用三维(3D)鱼骨，槽和岛状图案的布局技巧来提高横向mosfet的PW/NW结的击穿电压。新型的横向双扩散mosfet (LDMOSFET)和双扩散漏极mosfet (DDDMOSFET)没有任何高压(HV)层，在标准的5V低压(LV) CMOS技术中实现。实验结果表明，所研制的dddmosfet和ldmosfet分别可用于10V和60V电压。

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Using LV process to design high voltage DDDMOSFET and LDMOSFET with 3-D profile structure

In this work, layout skills using three dimensional (3D) fish bone, slot, and island patterns to enhance the breakdown voltage of PW/NW junction of lateral MOSFETs is developed. Novel lateral double diffused MOSFETs (LDMOSFET) and Double Diffused Drain MOSFETs (DDDMOSFET) without any high voltage (HV) layer are achieved in a standard 5V low voltage (LV) CMOS technology. From the experiment results, the developed DDDMOSFETs and LDMOSFETs can be used for 10V and 60V application respectively.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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