用于In0.53Ga0.47As n沟道超薄体场效应晶体管(UTB-FET)串联电阻降低的嵌入式金属源极/漏极(eMSD)

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210150

S. Subramanian, I. Ivana, Y. Yeo

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引用次数: 3

摘要

我们报道了一种新型的n沟道超薄体场效应晶体管(UTB-FET)，该晶体管包括在准绝缘InAlAs区域形成的嵌入式金属源极/漏极(eMSD)。InAlAs阻挡层显著降低了断开状态泄漏电流IOFF。eMSD由Ni-InGaAs导电层和Ni-InAlAs导电层组成，具有~20 Ω/平方的低片电阻Rsh。与具有薄S/D的传统UTB-FET相比，这显著降低了寄生S/D电阻Rsd。

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Embedded Metal Source/Drain (eMSD) for series resistance reduction in In0.53Ga0.47As n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)

We report a novel n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET) comprising an embedded Metal Source/Drain (eMSD) formed in a quasi-insulating InAlAs region. The InAlAs barrier layer reduces off-state leakage current IOFF significantly. The eMSD consists of conductive Ni-InGaAs and Ni-InAlAs layers, and has a low sheet resistance Rsh of ~20 Ω/square. This achieves a significant reduction in the parasitic S/D resistance Rsd, as compared with a conventional UTB-FET with thin S/D.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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