氧化物基电阻性开关存储器的设定时间统计

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564324

Meiyun Zhang, S. Long, Guoming Wang, Zhaoan Yu, Yang Li, D. Xu, H. Lv, Qi Liu, E. Miranda, J. Suñé, Ming Liu

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引用次数: 0

摘要

本文基于Ti/ZrO2/Pt RRAM器件，采用统计方法研究了设置时间(tset)与初始脱态电阻(Roff)的相关特性。数据采集采用调宽脉冲操作(WAPO)方法。使用威布尔分布来分析tset的变化。tSet分布的威布尔斜率(βt)和尺度因子(tset63%)均随Roff呈对数增长。建立了一个基于分析细胞的模型来解释实验统计数据。本文的研究结果对开关均匀性和设定速度-干扰困境间权衡的优化提供了启示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The statistics of set time of oxide-based resistive switching memory

In this paper, the characteristics of the set time (t_set) correlated with the initial off-state resistance (R_off) were studied using a statistical method based on a Ti/ZrO₂/Pt RRAM device. The data were collected by the width-adjusting pulse operation (WAPO) method. The Weibull distribution is used to analyze t_set variation. Both the Weibull slope (β_t) and scale factor (t_set63%) of t_Set distributions increase logarithmically with R_off. An analytical cell-based model was developed to explain the experimental statistics. Our result provides an inspiration on the switching uniformity and optimization of the tradeoff between the set speed-disturb dilemma.

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2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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