金属/通孔堆叠连接基板的无源电压对比研究

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2018-07-01 DOI:10.1109/IPFA.2018.8452531

Y. Shen, T. Irene, Jie Zhu, Zhiqiang Mo

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引用次数: 2

摘要

本文对金属/通孔/主动链ET结构的无源电压对比进行了详细的研究。以电子束和离子束为基础的PVC技术在不同的实验环境下进行了试验。发现电子束PVC在失效部位不能提供明显的对比。基于离子束的PVC成功地隔离了故障位置。此外，还观察到不同设置下PVC对比度的一些有趣变化。FIB截面揭示了破坏机理。基于破坏机理和理论模型，可以解释观察到的PVC对比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Passive Voltage Contrast Investigation of Metal/Via Stack Connecting to Substrate

In this paper, a detailed study of passive voltage contrast on a metal/via/active chain ET structure is performed. Both electron-beam and ion-beam based PVC techniques are tried with different experimental settings. It is found that electron-beam based PVC cannot provide significant contrast at the failure site. The ion-beam based PVC successfully isolates the failure location. Moreover, some interesting PVC contrast changes with different settings are also observed. FIB cross section reveals the failure mechanism. Based on the failure mechanism and theoretical models, the observed PVC contrast can be explained.

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2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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