SOI CMOS锁存器的亚稳态

C. Tretz, C. Chuang, L. Terman, C. Anderson, C. Zukowski
{"title":"SOI CMOS锁存器的亚稳态","authors":"C. Tretz, C. Chuang, L. Terman, C. Anderson, C. Zukowski","doi":"10.1109/SOI.1997.634983","DOIUrl":null,"url":null,"abstract":"SOI has recently emerged as a serious contender for low-power high-performance applications. This paper examines the metastability of CMOS latches based on partially-depleted (PD) SOI devices with various body-connection topologies.","PeriodicalId":344728,"journal":{"name":"1997 IEEE International SOI Conference Proceedings","volume":"260 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Metastability of SOI CMOS latches\",\"authors\":\"C. Tretz, C. Chuang, L. Terman, C. Anderson, C. Zukowski\",\"doi\":\"10.1109/SOI.1997.634983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SOI has recently emerged as a serious contender for low-power high-performance applications. This paper examines the metastability of CMOS latches based on partially-depleted (PD) SOI devices with various body-connection topologies.\",\"PeriodicalId\":344728,\"journal\":{\"name\":\"1997 IEEE International SOI Conference Proceedings\",\"volume\":\"260 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1997.634983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1997.634983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

SOI最近成为低功耗高性能应用程序的有力竞争者。本文研究了基于不同体连接拓扑的部分耗尽SOI器件的CMOS锁存器的亚稳态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Metastability of SOI CMOS latches
SOI has recently emerged as a serious contender for low-power high-performance applications. This paper examines the metastability of CMOS latches based on partially-depleted (PD) SOI devices with various body-connection topologies.
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