薄圆柱形硅纳米线mosfet量子力学效应的基于物理的紧凑模型

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159313

B. Cousin, O. Rozeau, M. Jaud, J. Jomaah

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引用次数: 3

摘要

由于我们知道量子力学效应在环栅mosfet中占主导地位，因此应该建立一个模型。本文首次用变分方法建立了硅纳米线mosfet的量子化分析模型。将模型实现为类表面电位模型。计算结果与数值模拟结果吻合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A physics-based compact model of quantum-mechanical effects for thin cylindrical Si-Nanowire MOSFETs

Since we know that quantum-mechanical effects are predominant in surrounding-gate MOSFETs, a model should be developed. For the first time, this paper presents an analytic model of quantization for thin cylindrical Si-Nanowire MOSFETs by using a variational approach. The model is implemented into a surface potential like model. It is shown that results agree with the numerical simulations.

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来源期刊

2009 International Symposium on VLSI Technology, Systems, and Applications

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