在超细硅纳米级生成技术中，硅的缺陷与含碳蒸汽发生反应

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378101

Po-Ying Chen, Shen-Li Chen, M. Tsai, M.H. Jing, T. Lin, Cheng-Chia Kuo

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引用次数: 0

摘要

本研究详细讨论了“硅衬底损伤缺陷”，并介绍了这些缺陷的形成机制及其根本原因。这些缺陷在未来的深亚微米ULSI中可能会变得越来越重要。在制造过程中，有两种情况通常会导致硅损伤缺陷，即:(1)含碳水印和(2)硅晶片表面积聚的电荷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Defects of Silicon Reacted with Carbon Content Vapour in ULSI Nano-meter-Generation Technology

This investigation considers in detail a defect called "silicon substrate damaged defects" and also introduces these defects' forming mechanisms and their root causes. These defects are likely to become increasing important in the future of deep-sub micrometer ULSI's situation. Two conditions typically result in silicon damaged defects during manufacturing processes namely: (1) watermark with carbon content and (2) the electrical charges accumulated on the silicon wafer surface.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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