PRAM耐力失效的物理根源研究

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241900

J. Bae, K. Hwang, K. H. Park, S. Jeon, J. Choi, J. Ahn, S. Kim, D. Ahn, H. Jeong, S. Nam, G. Jeong, H. Cho, D. Jang, Cg Park

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引用次数: 1

摘要

耐久性失效可分为三类，均源于熔融相电迁移引起的GST原子输运。在此基础上，提出了不受原子输运影响的电池结构和更好的循环性能。

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Investigation on physical origins of endurance failures in PRAM

Endurance failures are classified into three groups, all of which originate from the atomic transport of GST due to electromigration in molten phase. Based on the analysis, cell structure insusceptible to the atomic transport and for better cycling performance was proposed.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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