基于电流传感的分段延迟缺陷诊断

2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT) Pub Date : 2014-11-24 DOI:10.1109/DFT.2014.6962101

Wisam Aljubouri, Ahish Mysore Somashekar, T. Haniotakis, S. Tragoudas

{"title":"基于电流传感的分段延迟缺陷诊断","authors":"Wisam Aljubouri, Ahish Mysore Somashekar, T. Haniotakis, S. Tragoudas","doi":"10.1109/DFT.2014.6962101","DOIUrl":null,"url":null,"abstract":"A novel technique based on the current profile of path segments is presented. Certain current profiles can provide significant insights into the delay characteristics of the segments. They can assist in post-silicon diagnosis for delay defects and also determine shifts in the values of process parameters along the segments. A method to excite such current profiles is presented. Experimental evaluation on benchmark circuits shows the effectiveness of the approach.","PeriodicalId":414665,"journal":{"name":"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Diagnosis of segment delay defects with current sensing\",\"authors\":\"Wisam Aljubouri, Ahish Mysore Somashekar, T. Haniotakis, S. Tragoudas\",\"doi\":\"10.1109/DFT.2014.6962101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel technique based on the current profile of path segments is presented. Certain current profiles can provide significant insights into the delay characteristics of the segments. They can assist in post-silicon diagnosis for delay defects and also determine shifts in the values of process parameters along the segments. A method to excite such current profiles is presented. Experimental evaluation on benchmark circuits shows the effectiveness of the approach.\",\"PeriodicalId\":414665,\"journal\":{\"name\":\"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"volume\":\"106 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DFT.2014.6962101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFT.2014.6962101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了一种基于路径段当前轮廓的新技术。某些电流概况可以提供对分段延迟特性的重要见解。它们可以帮助对延迟缺陷进行硅后诊断，也可以确定沿分段的工艺参数值的变化。提出了一种激发这种电流分布的方法。在基准电路上的实验验证了该方法的有效性。

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Diagnosis of segment delay defects with current sensing

A novel technique based on the current profile of path segments is presented. Certain current profiles can provide significant insights into the delay characteristics of the segments. They can assist in post-silicon diagnosis for delay defects and also determine shifts in the values of process parameters along the segments. A method to excite such current profiles is presented. Experimental evaluation on benchmark circuits shows the effectiveness of the approach.

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2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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