高灵敏度正阻高功率激光KrF准分子激光光刻技术

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI:10.1109/VLSIT.1990.110981

Y. Tani, M. Sasago, N. Momura, H. Fujimoto, N. Furuya, T. Ono, N. Horiuchi, T. Miyata

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引用次数: 6

摘要

介绍了一种具有高灵敏度和稳定性的正极抗蚀剂，命名为ASKA (Alkaline Soluble Kinematics using Acid generator)。本文还设计了一种最大激光功率为8.8 W、脉冲数超过109个的KrF准分子激光器，命名为PCR(偏振耦合谐振器)。KrF准分子激光光刻0.4- m VLSI的结果表明，与传统的g线光刻技术相比，该技术结合了ASKA和PCR技术，提高了吞吐量

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KrF excimer laser lithography with high sensitivity positive resist and high power laser

A positive resist with high sensitivity and stability named ASKA (Alkaline Soluble Kinematics using Acid generator) is described. A KrF excimer laser with a maximum laser power of 8.8 W and more than 109 pulses named PCR (polarization coupled resonator) is also presented. The result of KrF excimer laser lithography for 0.4-μm VLSI using this combination of ASKA and PCR technologies indicates improved throughput over conventional g-line lithography

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Digest of Technical Papers.1990 Symposium on VLSI Technology

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