铜互连用Ta、TaN和TaSiN阻挡物的研究

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Pub Date : 1999-05-26 DOI:10.1109/IITC.1999.787098

Qing-Tang Jiang, R. Faust, H. Lam, J. Mucha

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引用次数: 4

摘要

研究了Ta、TaN和TaSiN阻挡材料对Cu种子层和后续电镀的影响。沉积在Ta和TaN屏障上的Cu种子经过退火后，在damascene沟槽侧壁上有明显的团聚现象。利用TaSiN，在退火前后均可观察到相对光滑、连续的Cu种子层。XRD研究表明，与具有Ta和TaN势垒的cu填充线相比，具有TaSiN势垒的cu填充线具有最小的应力和最强的(111)织构。

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Investigation of Ta, TaN and TaSiN barriers for copper interconnects

The effects of Ta, TaN, and TaSiN barrier materials on Cu seed layers and subsequent electroplating were investigated. Significant agglomeration of the Cu seed on damascene trench sidewalls was observed after annealing of the seed deposited on Ta and TaN barriers. With TaSiN, a relatively smooth and continuous Cu seed layer was observed both before and after the anneal. XRD studies indicate that Cu-filled damascene lines with TaSiN barriers have the least stress and the strongest (111) texture as compared to Cu-filled lines with Ta and TaN barriers.

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来源期刊

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)

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