AIDE(角度植入漏极和发射极):用于混合信号应用的BiCMOS技术模块

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493885

Hung-sheng Chen, Ji Zhao, C. Teng, L. Leu

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引用次数: 3

摘要

通过使用角植入漏极和发射器(AIDE)技术，提高了BiCMOS技术中混合信号器件的性能和可靠性。MOS/BJT晶体管的寿命提高了一个数量级，晶体管增益提高了>40%。该技术模块适用于现有的BiCMOS工艺，工艺复杂度增加最小。

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AIDE (Angle-Implanted Drain and Emitter): A BiCMOS technology module for mixed-signal applications

Increased mixed-signal device performance and reliability in a BiCMOS technology is achieved by using Angle-Implanted Drain and Emitter (AIDE) technology. An order of magnitude increase in lifetime is obtained in MOS/BJT transistors, while a >40% increase in transistor gain is achieved. This technology module is applicable to existing BiCMOS process with minimum increase in process complexity.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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