复合多结太阳能电池的Si//图像化金属层/Si结的制备及其改进的键合界面性能

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2018-06-01 DOI:10.1109/IMFEDK.2018.8581912

°T. Hishida, J. Liang, N. Shigekawa

{"title":"复合多结太阳能电池的Si//图像化金属层/Si结的制备及其改进的键合界面性能","authors":"°T. Hishida, J. Liang, N. Shigekawa","doi":"10.1109/IMFEDK.2018.8581912","DOIUrl":null,"url":null,"abstract":"We successfully fabricate a p+-Si//patterned Al in alignment to SiO2/p+ -Si junction by surface-activated bonding (SAB) of a p+-Si substrate and a patterned Al layer. We find that the interface resistance, which is 0.025 Ω.cm2 in a junction annealed at 300 °C, is much lower than p+ -Si/p+ -Si junction by SAB. This result shows the superiority of junctions using patterned metal layer to directly-bonded semiconductor.","PeriodicalId":434417,"journal":{"name":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Fabrication of Si//Patterned Metal Layer/Si Junctions for Hybrid Multijunction Solar Cells with Improved Bonding Interface Properties\",\"authors\":\"°T. Hishida, J. Liang, N. Shigekawa\",\"doi\":\"10.1109/IMFEDK.2018.8581912\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We successfully fabricate a p+-Si//patterned Al in alignment to SiO2/p+ -Si junction by surface-activated bonding (SAB) of a p+-Si substrate and a patterned Al layer. We find that the interface resistance, which is 0.025 Ω.cm2 in a junction annealed at 300 °C, is much lower than p+ -Si/p+ -Si junction by SAB. This result shows the superiority of junctions using patterned metal layer to directly-bonded semiconductor.\",\"PeriodicalId\":434417,\"journal\":{\"name\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2018.8581912\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2018.8581912","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

我们成功地通过p+-Si衬底和图案Al层的表面激活键合(SAB)制备了与SiO2/p+ -Si结对齐的p+-Si//图案Al。我们发现，界面电阻为0.025 Ω。在300°C退火的结中，cm2远低于p+ -Si/p+ -Si结的SAB。这一结果显示了图形化金属层结相对于直接键合半导体的优越性。

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Fabrication of Si//Patterned Metal Layer/Si Junctions for Hybrid Multijunction Solar Cells with Improved Bonding Interface Properties

We successfully fabricate a p+-Si//patterned Al in alignment to SiO2/p+ -Si junction by surface-activated bonding (SAB) of a p+-Si substrate and a patterned Al layer. We find that the interface resistance, which is 0.025 Ω.cm2 in a junction annealed at 300 °C, is much lower than p+ -Si/p+ -Si junction by SAB. This result shows the superiority of junctions using patterned metal layer to directly-bonded semiconductor.

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来源期刊

2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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