单片双向交换机(MBS)

F. Heinke, R. Sittig
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引用次数: 12

摘要

介绍了一种便于双向操作的新型功率半导体器件。数值模拟预测优异的静止特性,直至高温。此外,在所有操作条件下,该装置允许调整电子空穴等离子体的分布。例如,在关断期间,可以控制电流衰减速率和相应的过电压峰值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The monolithic bidirectional switch (MBS)
A new power semiconductor device is introduced which facilitates bidirectional operation. Numerical simulations predict excellent stationary characteristics up to high temperatures. Moreover under all operation conditions the device allows one to adjust the distribution of the electron hole plasma. For instance during turn-off it is possible to control the rate of current decay and the corresponding overvoltage peak.
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