SOI充电预防:芯片级网络跟踪和二极管保护

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309926

T. Hook, H. Bonges, D. Harmon, W. Lai

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引用次数: 3

摘要

在本文中，我们证明了SOI FET在处理过程中是导电的，并且FET在另一个晶体管的栅极和源/漏极上分流，实际上可以保护该器件免受充电损坏。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SOI charging prevention: chip-level net tracing and diode protection

In this paper we show that the SOI FET is conductive during processing, and also that a FET shunted across the gate and source/drain of another transistor does in fact protect that device against charging damage.

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来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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