一种用于测量MOSFET沟道区域掺杂分布的低频交流方法，具有一般可扩展到半导体表面

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292880

J. Kendall, J. Kolk, A. Boothroyd, D. A. Vincent

{"title":"一种用于测量MOSFET沟道区域掺杂分布的低频交流方法，具有一般可扩展到半导体表面","authors":"J. Kendall, J. Kolk, A. Boothroyd, D. A. Vincent","doi":"10.1109/ICMTS.1993.292880","DOIUrl":null,"url":null,"abstract":"A method is presented to measure the doping profile in the channel region of a MOSFET from the small signal AC parameter, dV/sub SB//dV/sub GS/, and to display the doping profile on the screen of a parameter analyzer. The depletion depth is directly proportional to dV/sub SB//dV/sub GS/, and the doping density is proportional to its first V/sub GS/ derivative. It is shown how the method can be extended to determine the doping profile near the semiconductor surface. This extension method is applicable to any MOSFET dopant profiling technique based on measurements near threshold.<<ETX>>","PeriodicalId":123048,"journal":{"name":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A low frequency AC method to measure the doping profile in the channel region of a MOSFET with general extendability to the semiconductor surface\",\"authors\":\"J. Kendall, J. Kolk, A. Boothroyd, D. A. Vincent\",\"doi\":\"10.1109/ICMTS.1993.292880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method is presented to measure the doping profile in the channel region of a MOSFET from the small signal AC parameter, dV/sub SB//dV/sub GS/, and to display the doping profile on the screen of a parameter analyzer. The depletion depth is directly proportional to dV/sub SB//dV/sub GS/, and the doping density is proportional to its first V/sub GS/ derivative. It is shown how the method can be extended to determine the doping profile near the semiconductor surface. This extension method is applicable to any MOSFET dopant profiling technique based on measurements near threshold.<<ETX>>\",\"PeriodicalId\":123048,\"journal\":{\"name\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1993.292880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1993.292880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种利用小信号交流参数dV/sub SB//dV/sub GS/测量MOSFET通道区掺杂分布的方法，并将其显示在参数分析仪的屏幕上。耗尽深度与dV/sub SB//dV/sub GS/成正比，掺杂密度与其第一个V/sub GS/导数成正比。它显示了该方法如何可以扩展到确定半导体表面附近的掺杂分布。这种扩展方法适用于任何基于阈值附近测量的MOSFET掺杂分析技术

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A low frequency AC method to measure the doping profile in the channel region of a MOSFET with general extendability to the semiconductor surface

A method is presented to measure the doping profile in the channel region of a MOSFET from the small signal AC parameter, dV/sub SB//dV/sub GS/, and to display the doping profile on the screen of a parameter analyzer. The depletion depth is directly proportional to dV/sub SB//dV/sub GS/, and the doping density is proportional to its first V/sub GS/ derivative. It is shown how the method can be extended to determine the doping profile near the semiconductor surface. This extension method is applicable to any MOSFET dopant profiling technique based on measurements near threshold.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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