估计单事件扰动对微处理器的影响

C. Constantinescu, Srini Krishnamoorthy, Tuyen Nguyen
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引用次数: 3

摘要

评估单事件干扰(seu)对复杂VLSI电路的影响,特别是对微处理器的影响,需要一种跨学科的方法,包括软误差建模、加速测量、原始错误率降额和专门的设计工具。本文讨论了用于估计存储单元软错误率(SER)的建模技术,提供了三个技术节点的加速测量结果,并提出了一种通过模拟错误注入来降低原始错误率的技术。我们使用测量结果来验证和校准模型。然后给出了“推土机”高级微设备处理器SER的推导工具和估计SER的实例。我们的方法通过对最敏感的逻辑采用数据完整性保护,实现了经济高效的SEU缓解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Estimating the effect of single-event upsets on microprocessors
Evaluating the impact of single-event upsets (SEUs) on complex VLSI circuits in general, and microprocessors in particular, requires an interdisciplinary approach, that includes soft error modeling, accelerated measurements, derating of the raw error rates, and specialized design tools. This paper discusses modeling techniques employed to estimate the soft error rates (SER) of storage cells, provides results of accelerated measurements for three technology nodes, and presents a technique for derating the raw error rates by simulated error injection. We use the measurement results to validate and calibrate the models. Then present the tool employed for deriving the SER of the Advanced Micro Devices processor code-named “Bulldozer” and examples of estimated SER. Our approach enables the cost-effective mitigation of SEU by employing data integrity protection for the most sensitive logic.
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