0.35μm CMOS工艺高温场漏电流研究

2010 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2010-03-22 DOI:10.1109/ICMTS.2010.5466849

S. T. Kong, P. Ronald, Chris Lee

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引用次数: 0

摘要

本文首次论证了两种场晶体管测试结构在200℃高温下的实验结果。对传统的条形结构和新型的方环结构的场晶体管进行了高温下的场漏电流和导通特性的测量和研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation on the field leakage current in 0.35μm CMOS technology at high temperature

For the first time, this paper demonstrates the experimental results for two types of test structures of field transistors up to 200°C. The field transistor structures which are stripe (conventional) and square ring (new) structures were measured and investigated in term of field leakage current and on-state characterization at high temperature.

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2010 International Conference on Microelectronic Test Structures (ICMTS)

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