饱和状态下Ge pmosfet的输运特性

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044194

C. Diouf, A. Cros, S. Monfray, J. Mitard, J. Rosa, F. Boeuf, G. Ghibaudo

{"title":"饱和状态下Ge pmosfet的输运特性","authors":"C. Diouf, A. Cros, S. Monfray, J. Mitard, J. Rosa, F. Boeuf, G. Ghibaudo","doi":"10.1109/ESSDERC.2011.6044194","DOIUrl":null,"url":null,"abstract":"The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Transport characterisation of Ge pMOSFETS in saturation regime\",\"authors\":\"C. Diouf, A. Cros, S. Monfray, J. Mitard, J. Rosa, F. Boeuf, G. Ghibaudo\",\"doi\":\"10.1109/ESSDERC.2011.6044194\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.\",\"PeriodicalId\":161896,\"journal\":{\"name\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"volume\":\"115 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2011.6044194\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044194","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

限制载流子速度的概念允许传输的性质的确定是第一次使用在Ge沟道MOSFET。研究了体锗(Ge) pMOSFET的极限载流子速度随温度的变化。尽管锗器件的输运质量很好，但在60 nm范围内仍存在以漂移扩散为主的输运。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Transport characterisation of Ge pMOSFETS in saturation regime

The limiting carrier velocity concept allowing the determination of the nature of transport is used for the first time in Ge channel MOSFET. The limiting carrier velocity extracted on bulk germanium (Ge) pMOSFET is studied versus temperature. A drift-diffusion dominated transport is demonstrated despite the good transport quality of germanium devices down to 60 nm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

自引率

0.00%

发文量