优化硅光电倍增管与光沟槽

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044204

R. Pagano, D. Corso, S. Lombardo, S. Libertino, G. Valvo, D. Sanfilippo, A. Russo, P. Fallica, A. Pappalardo, P. Finocchiaro

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引用次数: 14

摘要

本文报道了采用优化光沟槽技术的硅光电倍增管的电学特性。SiPM阵列的特征从单像素到完整的64×64像素设备。数据清楚地显示了暗电流与像素数的完美比例，从而表明在整个电压工作范围内像素之间几乎理想的绝缘。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimized silicon photomultipliers with optical trenches

This paper reports on the electrical characteristics of silicon photomultipliers (SiPM) with optimized optical trench technology. The SiPM arrays were characterized from single pixels up to the full 64×64 pixel device. The data clearly show a perfect scaling of the dark current with the pixel number, thus indicating an almost ideal insulation among the pixels in the whole voltage operating range.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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