利用气体蒸发技术制备具有纳米孔洞的超低k SiO/sub /薄膜

S. Nozaki, S. Banerjee, K. Uchida, H. Ono, H. Morisaki
{"title":"利用气体蒸发技术制备具有纳米孔洞的超低k SiO/sub /薄膜","authors":"S. Nozaki, S. Banerjee, K. Uchida, H. Ono, H. Morisaki","doi":"10.1109/IITC.2000.854305","DOIUrl":null,"url":null,"abstract":"We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO/sub 2/ thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO/sub 2/ film deposited by the gas evaporation technique is a good candidate for a low-k dielectric in the future Si VLSI.","PeriodicalId":287825,"journal":{"name":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultralow k SiO/sub 2/ thin films with nano-voids by gas-evaporation technique\",\"authors\":\"S. Nozaki, S. Banerjee, K. Uchida, H. Ono, H. Morisaki\",\"doi\":\"10.1109/IITC.2000.854305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO/sub 2/ thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO/sub 2/ film deposited by the gas evaporation technique is a good candidate for a low-k dielectric in the future Si VLSI.\",\"PeriodicalId\":287825,\"journal\":{\"name\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2000.854305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2000.854305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们已经开发了气体蒸发技术,以沉积具有纳米尺寸空隙的超低k(低至1.7)SiO/sub 2/薄膜。在这项技术中,船上的硅(Si)在含有少量氧气的氩气中蒸发。虽然薄膜含有许多纳米级的空隙,但它具有耐湿性,并且不随时间变化介电常数或电阻。通过气体蒸发技术沉积的SiO/sub /薄膜是未来低k介电材料的理想选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultralow k SiO/sub 2/ thin films with nano-voids by gas-evaporation technique
We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO/sub 2/ thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO/sub 2/ film deposited by the gas evaporation technique is a good candidate for a low-k dielectric in the future Si VLSI.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信