低栅极电容IEGT与沟槽屏蔽发射极(IEGT- tse)实现高频工作

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694438

K. Matsushita, H. Ninomiya, T. Naijo, M. Izumi, S. Umekawa

{"title":"低栅极电容IEGT与沟槽屏蔽发射极(IEGT- tse)实现高频工作","authors":"K. Matsushita, H. Ninomiya, T. Naijo, M. Izumi, S. Umekawa","doi":"10.1109/ISPSD.2013.6694438","DOIUrl":null,"url":null,"abstract":"A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Low gate capacitance IEGT with Trench Shield Emitter (IEGT-TSE) realizing high frequency operation\",\"authors\":\"K. Matsushita, H. Ninomiya, T. Naijo, M. Izumi, S. Umekawa\",\"doi\":\"10.1109/ISPSD.2013.6694438\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694438\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文提出了一种新型的注入增强型栅极晶体管(IEGT)设计，可大幅降低栅极电容。该器件结构名为IEGT- tse (IEGT with Trench Shield Emitter)，其假沟槽电极与发射极连接。它在开关过程中屏蔽栅电极的p阱浮动。为了证明这种效应，我们通过数值模拟和制造器件展示了1200级阻断电压下的开关波形。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low gate capacitance IEGT with Trench Shield Emitter (IEGT-TSE) realizing high frequency operation

A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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