嵌入式GGNMOS结构双回带双向可控硅器件的设计与仿真

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2020-10-23 DOI:10.1109/ICICM50929.2020.9292233

Yang Wang, Xiangliang Jin

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引用次数: 0

摘要

本文提出了一种采用嵌入式GGNMOS结构的双回带双向可控硅(DS-DDSCR)静电放电保护(ESD)器件。在传统晶闸管结构的基础上，采用嵌入式结构对其进行改进，并采用双回吸机制实现更好的箝位能力。通过等效电路和二维器件仿真对所提出的DS-DDSCR的工作机理进行了仿真。器件仿真结果表明，该双回吸式嵌入式结构可为标准BCD工艺的ESD保护提供有效的设计思路。

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Design and Simulation of the Double-Snapback Dual Direction Silicon Controlled Rectifier Device with Embedded GGNMOS Structure

This work proposes a double-snapback dual direction silicon controlled rectifier(DS-DDSCR) electrostatic discharge protection(ESD) device by using the embedded GGNMOS structure. Based on the traditional SCR structure, it is improved by embedded structure and the double-snapback mechanism is used to achieve better voltage clamping capability. The working mechanism of proposed DS-DDSCR is simulated through equivalent circuit and two-dimensional device simulation. The device simulation results show that this double-snapback embedded structure can provide an effective design idea for ESD protection of standard BCD process.

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来源期刊

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)

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