Formation of ultra-shallow low-reverse current n+p junctions by 450°C furnace annealing

Experimental results are reported of the successful formation of ultra-shallow low-reverse-current junctions by arsenic implantation followed by furnace annealing at 450°C. The junction depth and the sheet resistance of the 450°C annealed junctions are 60 nm and 150 Ω/square, respectively. The reverse bias current at -5 V is 1.5×10-7 A/cm2, which is about three orders of magnitude smaller than previously reported data. These results were obtained by an ultraclean ion implantation technology in which wafer surface contamination during the ion implantation process has been largely eliminated