具有InGaAs源极和InP漏极的非对称InGaAs mosfet

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880553

Jiongjiong Mo, E. Lind, L. Wernersson

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引用次数: 0

摘要

已开发出在源端(In0.53Ga0.47As)和漏端(InP)具有不同再生触点的非对称In0.53Ga0.47As mosfet。通过引入宽禁带材料InP作为漏极，在降低输出电导gd和提高击穿电压Vbd的情况下，获得了更高的自增益gm/gd。对于Lg=100nm，使用InP漏极获得了高振荡频率fmax=270GHz。

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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

Asymmetric In_0.53Ga_0.47As MOSFETs with different regrown contacts at source (In_0.53Ga_0.47As) and drain (InP) have been developed. By introducing a wider bandgap material, InP as drain electrode, higher self-gain g_m/g_d has been obtained with reduced output conductance g_d and improved break-down voltage V_bd. For L_g=100nm, a high oscillation frequency f_max=270GHz has been obtained using an InP drain.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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