离子注入掺杂剂低温活化研究进展

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. Pub Date : 1900-01-01 DOI:10.1109/IWJT.2002.1225211

J. Borland

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引用次数: 3

摘要

在过去的25年里，有文献报道离子注入掺杂剂可以通过450 ~ 800℃的低温退火实现电活化。然而，在过去的几年里，研究人员已经将这种技术应用于实现源极漏极扩展的超浅结(USJ)，以满足65纳米及以上节点的器件结路线图要求。因此，本文将对USJ形成的低温退火研究现状进行综述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low temperature activation of ion implanted dopants: a review

Ion implanted dopants can be electrically activated through low temperature annealing in the 450/spl deg/C to 800/spl deg/C as reported in literature over the past 25 years. However, researchers in the last few years have applied this technique to realize ultra shallow junctions (USJ) for source drain extensions to satisfy the device junction roadmap requirements for the 65 nm node and beyond. Therefore this paper will review the current status of low temperature annealing for USJ formation.

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Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.

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