{"title":"一种用于CMOS技术的新型低温栅极氮化物","authors":"Diaz, Cox, Greene, Perlaki, Carr, Manna, Bayoumi, Cao, Shamma, Tavassoli, Chi, Farrar, Lefforge, Chang, Langley, Marcoux","doi":"10.1109/VLSIT.1997.623689","DOIUrl":null,"url":null,"abstract":"A new-low temperature gate oxynitride has been developed for sub-0.25 pm CMOS technologies. In this process, nitrous oxide is cracked in a pre-furnace at high tem- perature to generate nitric oxide that flows into the main fur- nace where the gate oxidation is carried out at low tempera- ture. Physical analysis and gate oxide integrity data are used to demonstrate effective nitridation of the gate oxides grown in this fashion. The process was successfully integrated into a 0.15 pm, 1.5 V CMOS technology with 25 A physical gate oxide to minimize short channel effects and improve device performance and hot carrier reliability.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Novel Low-temperature Gate Oxynitride For CMOS Technologies\",\"authors\":\"Diaz, Cox, Greene, Perlaki, Carr, Manna, Bayoumi, Cao, Shamma, Tavassoli, Chi, Farrar, Lefforge, Chang, Langley, Marcoux\",\"doi\":\"10.1109/VLSIT.1997.623689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new-low temperature gate oxynitride has been developed for sub-0.25 pm CMOS technologies. In this process, nitrous oxide is cracked in a pre-furnace at high tem- perature to generate nitric oxide that flows into the main fur- nace where the gate oxidation is carried out at low tempera- ture. Physical analysis and gate oxide integrity data are used to demonstrate effective nitridation of the gate oxides grown in this fashion. The process was successfully integrated into a 0.15 pm, 1.5 V CMOS technology with 25 A physical gate oxide to minimize short channel effects and improve device performance and hot carrier reliability.\",\"PeriodicalId\":414778,\"journal\":{\"name\":\"1997 Symposium on VLSI Technology\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1997.623689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
针对低于0.25 pm的CMOS技术，开发了一种新型低温栅氮化氧。在这个过程中，氧化亚氮在预炉中高温裂解，生成一氧化氮，一氧化氮流入主炉，主炉在低温下进行栅氧化。物理分析和栅极氧化物完整性数据被用来证明在这种方式生长的栅极氧化物的有效氮化。该工艺已成功集成到具有25 a物理栅氧化物的0.15 pm, 1.5 V CMOS技术中，以最大限度地减少短通道效应，并提高器件性能和热载流子可靠性。
A Novel Low-temperature Gate Oxynitride For CMOS Technologies
A new-low temperature gate oxynitride has been developed for sub-0.25 pm CMOS technologies. In this process, nitrous oxide is cracked in a pre-furnace at high tem- perature to generate nitric oxide that flows into the main fur- nace where the gate oxidation is carried out at low tempera- ture. Physical analysis and gate oxide integrity data are used to demonstrate effective nitridation of the gate oxides grown in this fashion. The process was successfully integrated into a 0.15 pm, 1.5 V CMOS technology with 25 A physical gate oxide to minimize short channel effects and improve device performance and hot carrier reliability.
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