Chii-Chang Chen, Ming-Hung Li, Chih-Yang Chang, G. Chi, Jenq-Yang Chang, W. Cheng, J. Yeh, C. Wu
{"title":"高na氮化镓衍射微透镜的制备","authors":"Chii-Chang Chen, Ming-Hung Li, Chih-Yang Chang, G. Chi, Jenq-Yang Chang, W. Cheng, J. Yeh, C. Wu","doi":"10.1109/OMEMS.2002.1031446","DOIUrl":null,"url":null,"abstract":"We present the fabrication of the high-numerical-aperture GaN diffractive microlenses by gray-level mask and inductively coupled plasma etching. (NA=0.85) The microlenses were designed for the application of high-density optical data storage. The advantage of using GaN as the material of the diffractive microlenses is discussed.","PeriodicalId":285115,"journal":{"name":"IEEE/LEOS International Conference on Optical MEMs","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Fabrication of high-NA GaN diffractive microlenses\",\"authors\":\"Chii-Chang Chen, Ming-Hung Li, Chih-Yang Chang, G. Chi, Jenq-Yang Chang, W. Cheng, J. Yeh, C. Wu\",\"doi\":\"10.1109/OMEMS.2002.1031446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the fabrication of the high-numerical-aperture GaN diffractive microlenses by gray-level mask and inductively coupled plasma etching. (NA=0.85) The microlenses were designed for the application of high-density optical data storage. The advantage of using GaN as the material of the diffractive microlenses is discussed.\",\"PeriodicalId\":285115,\"journal\":{\"name\":\"IEEE/LEOS International Conference on Optical MEMs\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS International Conference on Optical MEMs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEMS.2002.1031446\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS International Conference on Optical MEMs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2002.1031446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication of high-NA GaN diffractive microlenses
We present the fabrication of the high-numerical-aperture GaN diffractive microlenses by gray-level mask and inductively coupled plasma etching. (NA=0.85) The microlenses were designed for the application of high-density optical data storage. The advantage of using GaN as the material of the diffractive microlenses is discussed.