三维集成电路制造的硅通孔技术

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT) Pub Date : 2012-11-01 DOI:10.1109/IEMT.2012.6521827

Y. Civale, A. Redolfi, P. Jaenen, M. Kostermans, E. Van Besien, S. Mertens, T. Witters, N. Jourdan, S. Armini, Z. El-Mekki, K. Vandersmissen, H. Philipsen, P. Verdonck, N. Heylen, P. Nolmans, Yunlong Li, K. Croes, G. Beyer, B. Swinnen, E. Beyne

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引用次数: 3

摘要

更高的性能、更高的运行速度和体积收缩要求更高的3D TSV互连密度。这项工作的重点是通过-中间3D工艺流程，这意味着在前端线(FEOL)之后和后端线(BEOL)互连过程之前处理3D- tsv。给出了imec 300mm TSV平台的描述，并详细讨论了高密度高纵横比三维互连的可靠工艺集成所面临的挑战。

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Through-silicon via technology for three-dimensional integrated circuit manufacturing

Higher performance, higher operation speed and volume shrinkage require high 3D TSV interconnect densities. This work focuses on a via-middle 3D process flow, which implies processing of the 3D-TSV after the front-end-of-line (FEOL) and before the back-end-of-line (BEOL) interconnect process. A description of the imec 300 mm TSV platform is given, and challenges towards a reliable process integration of high density high aspect-ratio 3D interconnections are also discussed in details.

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来源期刊

2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)

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