Z2-FET:具有门控迟滞的零斜率开关器件

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210113

J. Wan, C. Le Royer, A. Zaslavsky, S. Cristoloveanu

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引用次数: 19

摘要

我们提出了一种新型的开关器件Z2-FET，具有零亚阈值摆幅和零冲击电离的特点。该器件采用完全耗尽绝缘体上硅(FD-SOI)技术，并被证明可以在亚阈值斜率(SS) ON/IOFF电流比>下急剧切换;1010. 该器件在漏极电流-漏极电压(ID-VD)域表现出较大的迟滞性，导通电压(VON)由栅电压(VG)线性控制。仿真证实了该装置的运行是由载流子流动和它们的注入屏障之间的正反馈决定的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Z2-FET: A zero-slope switching device with gate-controlled hysteresis

We present a novel switching device named Z²-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <; 1 mV/dec and an I_ON/I_OFF current ratio >; 10¹⁰. The device further shows large hysteresis in drain current-drain voltage (I_D-V_D) domain with the turn-on voltage (V_ON) linearly controlled by gate voltage (V_G). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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