MCM-D互连生产中灾难性良率问题的解决方案

J. Hawley, V. Vo
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引用次数: 1

摘要

在MCM电路的生产过程中,良率问题一直是一个关注的问题,该电路采用1.0 mil线,3层铝层由聚酰亚胺绝缘体隔开,每平方英寸250走线,顶层是铝和金结合垫。电路的复杂性产生了许多缺陷的机会,但两种失效模式是灾难性的。这些缺陷包括兆欧姆短路和选择性金/铝层缺陷,如起泡金,铝键垫的空洞和变色。进行设计实验以阐明问题的根本原因,确定并实施纠正措施。兆欧姆短时间测试包括工艺流程评估(剥离与蚀刻)、金属湿蚀刻和TiW氧化。结果表明,由升离过程改为蚀刻过程可以消除兆欧短路。选择性金/铝层缺陷的实验参数包括金属沉积、TiW蚀刻、抗蚀剂条和聚酰亚胺蚀刻。研究参数之间存在显著的相互作用,试验零件分析表明,铝衬垫上存在金/铝位移反应。本文介绍了实验的设计、结果和纠正措施。测试表明铝沉积是问题的根本原因。停止使用金属沉积机导致产量增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Solutions to catastrophic yield problems in MCM-D interconnection production
Yield issues are a constant concern during production of an MCM circuit with 1.0 mil lines, 3 aluminum layers separated by polyimide insulator, 250 traces per square inch, and a top layer of aluminum and gold bond pads. The complexity of the circuit creates numerous defect opportunities, but two failure modes are catastrophic. These include megohm shorts and selective gold/aluminum layer defects such as blistering gold, voids and discoloration of aluminum bond pads. Designed experiments are performed to elucidate the root causes of the problems and determine and implement corrective actions. Megohm short testing includes process flow evaluations (lift-off vs. etchback), metal wet etches, and TiW oxidation. Results indicate that megohm shorts are eliminated by changing from a lift-off to an etchback process. Experimental parameters for selective gold/aluminum layer defects include metal deposition, TiW etch, resist strip, and polyimide etch. Significant interactions are observed between the parameters studied and test part analysis shows a gold/aluminum displacement reaction on the aluminum pads. The design of experiments, results, and corrective actions are presented. Tests showed that the aluminum deposition was the root cause of the problem. Discontinuation of use of the metal deposition machine resulted in increased yields.
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